Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeProductsMasana'antu mai wayoDdr3 idimm kalaman ƙwaƙwalwar ajiya

Ddr3 idimm kalaman ƙwaƙwalwar ajiya

Nau'in Biyan kuɗi:
L/C,T/T,D/A
Ba da fatawa:
FOB,EXW,CIF
Min. Order:
1 Piece/Pieces
Shigo:
Ocean,Air,Express,Land
  • Bayanan samfur
Overview
Abubuwan Samfuran

Model No.NSO4GU3AB

Bayar da Ability & Inarin Bayanai

ShigoOcean,Air,Express,Land

Nau'in Biyan kuɗiL/C,T/T,D/A

Ba da fatawaFOB,EXW,CIF

Marufi & Isarwa
Sayar da Rukuni:
Piece/Pieces

4GB 1600mhz 240-fil DDR3 UDimM


Tarihi

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Odar tebur

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Siffantarwa
Hengstar unbuuked DDR3 SDDram Dims (Unbufulded Double Double Dram Dual Dual Dual Dual Dual Dual Dual Dremy Memory wanda ke da karancin iko, aikin aiki na sauri. NS0GEGEBELAB shine 512M X 64-bit biyu matsayi 4GB DDR3-1600 CH11 1.5v SDram unbued Dimp Samfurin, wanda ya hade da kayan aikin guda goma sha shida 25-x 8-bit fbga. An shirya SPD zuwa ga daidaitaccen Laxin Lauyin DDR3-1600 lokacin 11-11-11 a 1.5v. Kowane 100-fil Dim yana amfani da yatsunsu na zinari. SDram Unbued Dimm an yi niyya don amfani azaman babban ƙwaƙwalwar ajiya lokacin da aka shigar a cikin tsarin kamar yanar gizo da aikin yanar gizo.


Fasas
Wit: VDD = 1.5V (1.425V zuwa 1.575v)
 vdq = 1.5v (1.425v zuwa 1.575v)
Ent800mhz Fack don 1600MB / Sec / Pin
Bankin cikin gida mai zaman kansa
Laxragrammable CAS Laxcy: 11, 10, 9, 8, 6
Laƙurin programbaable utenccy: 0, cl - 2, ko cl - 1 agogo
8-bit pre-fetch
Tsawon Metburst: 8 (Contleave ba tare da wani iyaka ba, mai aukuwa tare da farawa "000" kawai), 4 tare da TCCD = 4 wanda ba ya ba da izinin karantawa ko 4 wanda ba ya bada izinin karantawa ko 4 wanda ba ya yuwu ta amfani da A12 ko Mrs]
bi-shugabanci daban-daban bayanai
Daidaituwa (kai) galibinsu; Chaƙabi na ciki ta hanyar ZQ PIN (RZQ: 240 OHM ± 1%)
on Die Cire Gaske ta amfani da Ont Pin
.8us a kasa da Tasashi 85 ° C, 3.9us a 85 ° C <Teal <95 ° C
Sake saita Shiga
 adadaburabtance
ly-by torology
pcb: tsawo 1.18 "(30mm)
erhs mai ma'ana da ingogen-kyauta


SIFFOFIN SIFFOFI

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tebur Adireshin

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Bayanin Pin

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Bayanan kula : teburin PIN Tebur a ƙasa babbar jerin gwanon kowane yuwuwar filayen dukkanin kayayyaki DDR3. Dukkanin fil da aka lissafa Mayu ba a tallafa wa wannan tsarin. Duba ayyukan PIN don bayani takamaiman zuwa wannan matakin.


Block Dandali

4GB, 512MX64 Module (2Rank na x8)

1


2


SAURARA:
1.The zq ball a kowane bangaren DDR3 an haɗa shi da na waje 240ω ± 1% tsayayya da abin da aka daure a ƙasa. Ana amfani dashi don daidaitawa na karewar ta mutu da direban fitarwa.



Na module girma


Hangen nesa

3

Hangen nesa

4

Bayanan kula:
1.Alayen kowane abu yana cikin milimita (inci); Max / min ko hali (syw) inda lura.
2. Awacin girma ± 0.15mm sai dai an ƙayyade.
3.The Canjin Digram yana nufin kawai.

Kayan samfur : Masana'antu mai wayo

Imel zuwa wannan mai samarwa
  • *Subject:
  • *To:
    Mr. Jummary
  • *Imel:
  • *Saƙo:
    Sakonka ya kasance tsakanin haruffa 20-8000
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