Bayanin Sirri: Sirrinka yana da matukar mahimmanci a gare mu. Kamfaninmu yayi alkawarin kar a bayyana keɓaɓɓun bayananku ga kowane fallasa tare da izini na bayyananne.
Model No.: NSO4GU3AB
Shigo: Ocean,Air,Express,Land
Nau'in Biyan kuɗi: L/C,T/T,D/A
Ba da fatawa: FOB,EXW,CIF
4GB 1600mhz 240-fil DDR3 UDimM
Tarihi
Revision No. |
History |
Draft Date |
Remark |
1.0 |
Initial Release |
Apr. 2022 |
|
Odar tebur
Model |
Density |
Speed |
Organization |
Component Composition |
NS04GU3AB |
4GB |
1600MHz |
512Mx64bit |
DDR3 256Mx8 *16 |
Siffantarwa
Hengstar unbuuked DDR3 SDDram Dims (Unbufulded Double Double Dram Dual Dual Dual Dual Dual Dual Dual Dremy Memory wanda ke da karancin iko, aikin aiki na sauri. NS0GEGEBELAB shine 512M X 64-bit biyu matsayi 4GB DDR3-1600 CH11 1.5v SDram unbued Dimp Samfurin, wanda ya hade da kayan aikin guda goma sha shida 25-x 8-bit fbga. An shirya SPD zuwa ga daidaitaccen Laxin Lauyin DDR3-1600 lokacin 11-11-11 a 1.5v. Kowane 100-fil Dim yana amfani da yatsunsu na zinari. SDram Unbued Dimm an yi niyya don amfani azaman babban ƙwaƙwalwar ajiya lokacin da aka shigar a cikin tsarin kamar yanar gizo da aikin yanar gizo.
Fasas
Wit: VDD = 1.5V (1.425V zuwa 1.575v)
vdq = 1.5v (1.425v zuwa 1.575v)
Ent800mhz Fack don 1600MB / Sec / Pin
Bankin cikin gida mai zaman kansa
Laxragrammable CAS Laxcy: 11, 10, 9, 8, 6
Laƙurin programbaable utenccy: 0, cl - 2, ko cl - 1 agogo
8-bit pre-fetch
Tsawon Metburst: 8 (Contleave ba tare da wani iyaka ba, mai aukuwa tare da farawa "000" kawai), 4 tare da TCCD = 4 wanda ba ya ba da izinin karantawa ko 4 wanda ba ya bada izinin karantawa ko 4 wanda ba ya yuwu ta amfani da A12 ko Mrs]
bi-shugabanci daban-daban bayanai
Daidaituwa (kai) galibinsu; Chaƙabi na ciki ta hanyar ZQ PIN (RZQ: 240 OHM ± 1%)
on Die Cire Gaske ta amfani da Ont Pin
.8us a kasa da Tasashi 85 ° C, 3.9us a 85 ° C <Teal <95 ° C
Sake saita Shiga
adadaburabtance
ly-by torology
pcb: tsawo 1.18 "(30mm)
erhs mai ma'ana da ingogen-kyauta
SIFFOFIN SIFFOFI
MT/s |
tRCD(ns) |
tRP(ns) |
tRC(ns) |
CL-tRCD-tRP |
DDR3-1600 |
13.125 |
13.125 |
48.125 |
2011/11/11 |
Tebur Adireshin
Configuration |
Refresh count |
Row address |
Device bank address |
Device configuration |
Column Address |
Module rank address |
4GB |
8K |
32K A[14:0] |
8 BA[2:0] |
2Gb (256 Meg x 8) |
1K A[9:0] |
2 S#[1:0] |
Bayanin Pin
Symbol |
Type |
Description |
Ax |
Input |
Address inputs: Provide the row address for ACTIVE commands, and the column |
BAx |
Input |
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or |
CKx, |
Input |
Clock: Differential clock inputs. All control, command, and address input signals are |
CKEx |
Input |
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry |
DMx |
Input |
Data mask (x8 devices only): DM is an input mask signal for write data. Input data is |
ODTx |
Input |
On-die termination: Enables (registered HIGH) and disables (registered LOW) |
Par_In |
Input |
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. |
RAS#, |
Input |
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being |
RESET# |
Input |
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and |
Sx# |
Input |
Chip select: Enables (registered LOW) and disables (registered HIGH) the command |
SAx |
Input |
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address |
SCL |
Input |
Serial |
CBx |
I/O |
Check bits: Used for system error detection and correction. |
DQx |
I/O |
Data input/output: Bidirectional data bus. |
DQSx, |
I/O |
Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; |
SDA |
I/O |
Serial |
TDQSx, |
Output |
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD |
Err_Out# |
Output (open |
Parity error output: Parity error found on the command and address bus. |
EVENT# |
Output (open |
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical |
VDD |
Supply |
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The |
VDDSPD |
Supply |
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. |
VREFCA |
Supply |
Reference voltage: Control, command, and address VDD/2. |
VREFDQ |
Supply |
Reference voltage: DQ, DM VDD/2. |
VSS |
Supply |
Ground. |
VTT |
Supply |
Termination voltage: Used for control, command, and address VDD/2. |
NC |
– |
No connect: These pins are not connected on the module. |
NF |
– |
No function: These pins are connected within the module, but provide no functionality. |
Bayanan kula : teburin PIN Tebur a ƙasa babbar jerin gwanon kowane yuwuwar filayen dukkanin kayayyaki DDR3. Dukkanin fil da aka lissafa Mayu ba a tallafa wa wannan tsarin. Duba ayyukan PIN don bayani takamaiman zuwa wannan matakin.
Block Dandali
4GB, 512MX64 Module (2Rank na x8)
Na module girma
Hangen nesa
Hangen nesa
Bayanan kula:
1.Alayen kowane abu yana cikin milimita (inci); Max / min ko hali (syw) inda lura.
2. Awacin girma ± 0.15mm sai dai an ƙayyade.
3.The Canjin Digram yana nufin kawai.
Kayan samfur : Masana'antu mai wayo
Bayanin Sirri: Sirrinka yana da matukar mahimmanci a gare mu. Kamfaninmu yayi alkawarin kar a bayyana keɓaɓɓun bayananku ga kowane fallasa tare da izini na bayyananne.
Cika ƙarin bayani don hakan na iya shiga tare da ku cikin sauri
Bayanin Sirri: Sirrinka yana da matukar mahimmanci a gare mu. Kamfaninmu yayi alkawarin kar a bayyana keɓaɓɓun bayananku ga kowane fallasa tare da izini na bayyananne.